{"id":1056,"date":"2024-11-28T20:07:13","date_gmt":"2024-11-28T12:07:13","guid":{"rendered":"http:\/\/cheekeongtan.people.ust.hk\/?page_id=1056"},"modified":"2024-11-28T20:07:30","modified_gmt":"2024-11-28T12:07:30","slug":"publication-new","status":"publish","type":"page","link":"http:\/\/cheekeongtan.people.ust.hk\/?page_id=1056","title":{"rendered":"Publications"},"content":{"rendered":"\n<h2 class=\"wp-block-heading\" id=\"Journal\">Refereed Journal Publications<\/h2>\n\n\n\n<ul>\n<li><strong><u>C. K. Tan<\/u><\/strong>, J. Zhang, X. H. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, \u201cFirst-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters\u201d,\u00a0<em>IEEE \/ OSA Journal of Display Technology<\/em>, vol. 9, no. 4, pp. 272-279, April 2013. DOI: 10.1109\/JDT.2013.2248342<\/li>\n\n\n\n<li>G. Y. Liu, J. Zhang,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cEfficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum Wells Light-Emitting Diodes\u201d,\u00a0<em>IEEE Photonics Journal<\/em>, vol. 5, no. 2, Art. 2201011, April 2013. DOI: 10.1109\/JPHOT.2013.2255028<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cFirst-Principle Natural Band Alignment of GaN \/ Dilute-As GaNAs Alloy,\u201d\u00a0<em>AIP Advances<\/em>, vol. 5, no. 1, p. 017129, January 2015. DOI: 10.1063\/1.4906569<\/li>\n\n\n\n<li>(<strong>Invited Paper<\/strong>)\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cNanostructured Lasers: Electrons and Holes Get Closer,\u201d\u00a0<em>Nature Nanotechnology<\/em>, vol. 10, no. 2, pp. 107-109, February 2015. DOI: 10.1038\/nnano.2014.333<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cAuger Recombination Rates in Dilute-As GaNAs Semiconductor\u201d,\u00a0<em>AIP Advances<\/em>, vol. 5, no. 5, p. 057135, May 2015. DOI: 10.1063\/1.4921394<\/li>\n\n\n\n<li>P. F. Zhu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, W. Sun, and N. Tansu, \u201cAspect Ratio Engineering of Microlens Arrays in Thin-Film Flip-Chip Light-Emitting Diodes\u201d,\u00a0<em>Applied Optics<\/em>, vol. 54, no. 34, pp. 10299-10303, November 2015. DOI: 10.1364\/AO.54.010299<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, W. Sun and N. Tansu, \u201cInGaN \/ Dilute-As GaNAs Interface Quantum Well for Red Emitters\u201d,\u00a0<em>Scientific Reports<\/em>\u00a0[Nature Publishing Group], vol. 6, Art. 19271, January 2016. DOI: 10.1038\/srep19271.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, W. Sun and N. Tansu, \u201cDilute-As AlNAs Alloy for Deep Ultraviolet Emitters\u201d,\u00a0<em>Scientific Reports<\/em>\u00a0[Nature Publishing Group], vol. 6, Art. 22215, February 2016. DOI: 10.1038\/srep22215<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, W. Sun, D. Borovac and N. Tansu, \u201cLarge Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters\u201d,\u00a0<em>Scientific Reports\u00a0<\/em>[Nature Publishing Group], vol. 6, Art. 22983, March 2016. DOI: 10.1038\/srep22983<\/li>\n\n\n\n<li>P. F. Zhu, H. Zhu, W. Qin, B. H. Dantas, W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cNarrow-Linewidth Red-Emission Eu<sup>3+<\/sup>-Doped TiO<sub>2<\/sub>\u00a0Spheres for Light-Emitting Diodes\u201d,\u00a0<em>J. Appl. Phys.<\/em>, vol. 119, Art. 124305, March 2016.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, W. Sun, and N. Tansu, \u201cFirst-Principle Electronic Properties of Dilute-P GaN<sub>1-x<\/sub>P<sub>x<\/sub>\u00a0Alloy for Visible Light Emitters\u201d,\u00a0<em>Scientific Reports<\/em>\u00a0[Nature Publishing Group], vol. 6, Art. 24412, April 2016. DOI: 10.1038\/srep24412<\/li>\n\n\n\n<li>G. Zeng,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, N. Tansu, and B. A. Krick, \u201cUltralow Wear of Gallium Nitride\u201d,\u00a0<em>Applied Physics Letters<\/em>, vol. 109, Art. 051602, August 2016. DOI: 10.1063\/1.4960375<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, W. Sun, J. J. Wierer, Jr., and N. Tansu, \u201cEffect of Interface Roughness on Auger Recombination Rates\u201d, AIP Advances, vol. 7, Art. 035212, March 2017. DOI:10.1063\/1.4978777<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cIII-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN\/GaN Ultra-Short Period Superlattice Nanostructures\u201d, Scientific Reports [Nature Publishing Group], vol. 7, Art. 6671, July 2017. DOI: 10.1038\/s41598-017-06889-3<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cAlN\/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics\u201d Scientific Reports [Nature Publishing Group], vol. 7, Art. 11826, September 2017. DOI:10.1038\/s41598-017-12125-9<\/li>\n\n\n\n<li>I. E. Fragkos,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, Y. Fujiwara, V. Dierolf, and N. Tansu, \u201cPathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes,\u201d Scientific Reports [Nature Publishing Group], vol. 7, Art. 14648, November 2017. DOI: 10.1038\/s41598-017-15302-y<\/li>\n\n\n\n<li>D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cInvestigations of the Optical Properties of GaNAs Alloys by First-Principle,\u201d Scientific Reports [Nature Publishing Group], vol. 7, Art. 17285, December 2017. DOI: 10.1038\/s41598-017-17504-w<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, J. J. Wierer, Jr., and N. Tansu, \u201cUltra-Broadband Optical Gain in III-Nitride Digital Alloys,\u201d Scientific Reports [Nature Publishing Group], vol. 8, Art. 3109, February 2018. DOI: 10.1038\/s41598-018-21434-6<\/li>\n\n\n\n<li>D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cOptical Properties and Refractive Indices of GaN1-xPx Alloys,\u201d Scientific Reports [Nature Publishing Group], vol. 8, Art. 6025, April 2018. DOI: 10.1038\/s41598-018-24384-1<\/li>\n\n\n\n<li>G. S. Zeng, X. F. Yang,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, C. J. Marvel, B. E. Koel, N. Tansu, and B. A. Krick, \u201cShear-Induced Band Bending in Gallium Nitride,\u201d ACS Applied Materials &amp; Interfaces, vol. 10, no. 34, pp. 29048-29057, June 2018. DOI: 10.1021\/acsami.8b02271<\/li>\n\n\n\n<li>D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cFirst-Principle Electronic Properties of Dilute-P AlNP Deep Ultraviolet Semiconductor\u201d, AIP Advances, vol. 8, Art. 085119, August 2018. DOI: 10.1063\/1.5036978<\/li>\n\n\n\n<li>X. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cElectronic Properties of Monoclinic (In<sub>x<\/sub>Ga<sub>1-x<\/sub>)<sub>2<\/sub>O<sub>3<\/sub>\u00a0Alloys by First Principle\u201d, AIP Advances, vol. 9, Art. 035318, March 2019. DOI:10.1063\/1.5093195<\/li>\n\n\n\n<li>J. Goodrich, D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cBand Anti-Crossing Model in Dilute-As GaNAs Alloys\u201d, Scientific Reports [Nature Publishing Group], vol. 9, Art. 5128, March 2019. DOI: 10.1063\/1.5086979<\/li>\n\n\n\n<li>Z. Liu, X. Wang, Y. Liu, D. Y. Guo, S. Li, Z. Yan,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, W. Li, P. Li, and W. Tang, \u201cHigh Performance Deep-UV Solar-Blind Photodetector Based on \u03b2-Ga<sub>2<\/sub>O<sub>3\u00a0<\/sub>Schottky Photodiode\u201d, J. Mat. Chem. C, October 2019 DOI: 10.1039\/c9tc04912f<\/li>\n\n\n\n<li>X. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cStructural and Electronic Properties of Dilute-Selenide Gallium Oxide\u201d, AIP Advances, AIP Advances, vol. 9, p. 125204, Dec. 2019. DOI: 10.1063\/1.5128675<\/li>\n\n\n\n<li>D. Borovac, W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cFirst-Principle Electronic Properties of Dilute-As InGaNAs Alloys\u201d, J. Appl. Phys., vol. 127, p. 015103, Jan. 2020. DOI: 10.1063\/1.5119371<\/li>\n\n\n\n<li>X. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cFirst-Principle Investigation of Monoclinic (Al<sub>x<\/sub>In<sub>y<\/sub>Ga<sub>1-x-y<\/sub>)<sub>2<\/sub>O<sub>3<\/sub>\u00a0Quaternary Alloys\u201d, Semiconductor Science and Technology, vol. 35, p. 025023, Jan. 2020. DOI: 10.1088\/1361-6641\/ab607c<\/li>\n\n\n\n<li>S. Ober, S. Austin, D. Crouse, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cNew Fiber Bragg Grating for Filtration of Orbital Angular Momentum Wave Modes\u201d, AIP Advances, vol. 10, no. 2, Feb. 2020. DOI: 10.1063\/1.5126610<\/li>\n\n\n\n<li>C. Wu, D. Y. Guo, L. Y. Zhang, P. G. Li, F. B. Zhang,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, \u201cSystematic investigation of the growth kinetics of \u03b2-Ga<sub>2<\/sub>O<sub>3<\/sub>\u00a0epilayer by plasma enhanced chemical vapor deposition\u201d, Appl. Phys. Lett., vol. 116, no. 7, p. 072102, Feb. 2020. DOI: 10.1063\/1.5142196<\/li>\n\n\n\n<li>D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and W. H. Tang, \u201cSelf-powered solar-blind photodetectors based on Ga<sub>2<\/sub>O<sub>3<\/sub>\u00a0phase junctions\u201d, Phys. Rev. Appl., vol. 13, p. 024051, Feb. 2020. DOI: 10.1103\/13.024051<\/li>\n\n\n\n<li>X. Liu, C. Sammarco, G. Zeng, D. Guo, W. H. Tang, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201c<a href=\"https:\/\/aip.scitation.org\/doi\/abs\/10.1063\/5.0005808\">Investigations of monoclinic- and orthorhombic-based (B<sub>x<\/sub>Ga<sub>1\u2212x<\/sub>)<sub>2<\/sub>O<sub>3<\/sub>\u00a0alloys<\/a>\u201d, Appl. Phys. Lett., vol. 117, p. 012104, Jul. 2020. DOI:\/\u00a0<a href=\"https:\/\/doi.org\/10.1063\/5.0005808\">10.1063\/5.0005808<\/a><\/li>\n\n\n\n<li>J. Goodrich,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, and N. Tansu, \u201cProspects for hole doping in dilute-anion III-nitrides\u201d, Appl. Phys. Lett., vol. 118, p. 072106, Feb. 2021.<\/li>\n\n\n\n<li>X. L. Liu, S.Ober, W. Tang, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cLarge bandgap tuning in corundum Al<sub>2<\/sub>(O<sub>1\u2212x<\/sub>Se<sub>x<\/sub>)<sub>3<\/sub>\u201d, Journal of Materials Chemistry C, 9(23), pp.7436-7443. 2021<\/li>\n\n\n\n<li>W. Sun, H. Fu, D. Borovac, J. Goodrich,<strong>\u00a0<u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cDilute-As InGaNAs \/ GaN quantum wells for high-efficiency red emitters\u201d, IEEE Journal of Quantum Electronics, vol. 58, no. 2, p. 3000106, Jan. 2022.<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\" id=\"Conference\">Refereed Conference Publications\/Presentations<\/h2>\n\n\n\n<ul>\n<li><strong>C. L. Tan<\/strong>, H. S. Djie,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, \u201cThe Effect of Multi Active Junctions on Broadband Emission from InAs\/InGaAlAs Quantum-dash Structure\u201d,\u00a0<em>The 22nd Annual Meeting of the IEEE Photonics Society (<strong>IEEE PS\u201909<\/strong>)<\/em>, Belek-Antalya, Turkey, (2009).<\/li>\n\n\n\n<li><strong>C. L. Tan<\/strong>, H. S. Djie,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and B. S. Ooi, \u201cUnique Lasing Mechanism of Localized Dispersive Nanostructures in InAs\/InGaAlAs Quantum Dash Broad Interband Laser\u201d,\u00a0<em>Novel In-Plane Semiconductor Lasers IX conference,\u00a0<strong>SPIE Photonics West 2010<\/strong><\/em>, San Francisco, CA, USA, (2010).<\/li>\n\n\n\n<li>C. L. Tan,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, H. S. Djie, and B. S. Ooi, \u201cAbsence of Quantized Energy-states Local Diffusion in Semiconductor Quantum Dash structures\u201d,\u00a0<em>IEEE\/OSA Conference on Lasers and Electro-Optics 2010\u00a0<strong>(IEEE CLEO\/QELS\u201910)<\/strong><\/em><strong>,<\/strong>\u00a0San Jose, California, (2010).<\/li>\n\n\n\n<li><strong>(Invited Conference Talk)<\/strong>\u00a0N. Tansu, J. Zhang, G. Y. Liu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, P. F. Zhu, and H. P. Zhao, \u201cAdvances in III-Nitride Semiconductors for Energy Efficiency Applications,\u201d Proc. of the\u00a0<em>KAUST-UCSB-NSF Solid State Lighting Workshop 2012<\/em>, Thuwal, Saudi Arabia, February 2012.<\/li>\n\n\n\n<li><strong>(Invited Keynote Plenary Conference Talk)<\/strong>\u00a0N. Tansu, J. Zhang, G. Y. Liu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, P. F. Zhu, and H. P. Zhao, \u201cPhysics and Technology of III-Nitride Semiconductors for Energy Efficiency Applications,\u201d Proc. of the\u00a0<em>IUMRS-ICYRAM Conference 2012<\/em>, Material Research Society (MRS), Singapore, July 2012.<\/li>\n\n\n\n<li><strong>(Invited Conference Paper)\u00a0<\/strong>J. Zhang, G. Y. Liu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, P. F. Zhu, H. P. Zhao, andN. Tansu, \u201cEngineering Nanostructures in Active Regions and Devices for High-Efficiency III-Nitride Light-Emitting Diodes \u2013 Epitaxy and Physics,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2012<\/em>, NanoEpitaxy : Materials and Devices IV, San Diego, CA, August 2012.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, J. Zhang, X. H. Li, G. Y. Liu, and N. Tansu, \u201cDilute-As GaNAs Semiconductor for Visible Emitters,\u201d\u00a0<em>Proc. of the IEEE Photonics Conference 2012<\/em>, Burlingame, CA, September 2012.<\/li>\n\n\n\n<li>G. Y. Liu, J. Zhang,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cCharacteristics of InGaN Quantum Wells Light-Emitting Diodes with Thin AlGaInN Barrier Layers,\u201d\u00a0<em>Proc. of the IEEE Photonics Conference 2012<\/em>, Burlingame, CA, September 2012.<\/li>\n\n\n\n<li><strong>(Invited Conference Paper)\u00a0<\/strong>N. Tansu, J. Zhang, G. Y. Liu, H. P. Zhao,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and P. F. Zhu, \u201cPhysics of High-Efficiency III-Nitride Quantum Wells Light-Emitting Diodes,\u201d Proc. of the\u00a0<em>Asian Communications and Photonics (ACP) Conference 2012<\/em>, Guangzhou, China, November 2012.<\/li>\n\n\n\n<li>G. Y. Liu, J. Zhang,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cInGaN-Delta-InN Quantum Well Light-Emitting Diodes with Carrier Transport Effect,\u201d Proc. of the\u00a0<em>SPIE Photonics West 2013<\/em>, San Francisco, CA, February 2013.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, J. Zhang, G. Y. Liu, and N. Tansu, \u201cEffect of Interband Energy Separation on the Interband Auger Processes in III-Nitride Semiconductors,\u201d Proc. of the\u00a0<em>SPIE Photonics West 2013<\/em>, San Francisco, CA, February 2013.<\/li>\n\n\n\n<li><strong>(Tutorial Conference Paper)<\/strong>\u00a0N. Tansu, J. Zhang, G. Y. Liu, H. P. Zhao,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and P. F. Zhu, \u201cInternal and External Efficiency in InGaN-Based Light-Emitting Diodes,\u201d Proc. of the\u00a0<em>Asian Communications and Photonics (ACP) Conference 2013<\/em>, Beijing, China, November 2013.<\/li>\n\n\n\n<li>P. F. Zhu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cExtraction Efficiency Enhancement of Thin-Film Flip-Chip GaN Light-Emitting Diodes with Self-Assembled Microsphere Arrays,\u201d Proc. of the\u00a0<em>International Conference on White LEDs and Solid State Lighting (WLED 5) Conference 2014<\/em>, Jeju, Korea, June 2014.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, P. F. Zhu, and N. Tansu, \u201cInvestigation of Dilute-As GaNAs Active Regions for High Efficiency GaN-based Light-Emitting Diodes,\u201d Proc. of the\u00a0<em>International Conference on White LEDs and Solid State Lighting (WLED 5) Conference 2014<\/em>, Jeju, Korea, June 2014.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, P. F. Zhu, and N. Tansu, \u201cControlling the Interband Auger Recombination Mechanism in III-Nitride Based Ternary Active Regions,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2014<\/em>, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.<\/li>\n\n\n\n<li>P. F. Zhu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cComparison of Extraction Efficiency for Thin-Film Flip-Chip InGaN Light-Emitting Diodes with Microsphere and Microconcave Array Structures,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2014<\/em>, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.<\/li>\n\n\n\n<li>P. F. Zhu, H. Y. Zhu, W. P. Qin,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cEu<sup>3+<\/sup>-doped TiO<sub>2<\/sub>\u00a0Nanospheres for GaN-based White Light-Emitting Diodes,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2014<\/em>, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.<\/li>\n\n\n\n<li>P. F. Zhu, T. Toma,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cInvestigation of Solar Hydrogen Generation from the GaN and InGaN Thin Films,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2014<\/em>, Solar Energy + Technology, San Diego, CA, August 2014.<\/li>\n\n\n\n<li><strong>(Invited Conference Paper)\u00a0<\/strong>P. F. Zhu, W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cLight Extraction Efficiency Enhancement in GaN-Based LEDs with Self-Assembly Approach,\u201d Proc. of the\u00a0<em>Progress In Electromagnetics Research Symposium (PIERS) 2014<\/em>, Guangzhou, China, August 2014.<\/li>\n\n\n\n<li><strong>(Invited Keynote Conference Paper)\u00a0<\/strong>N. Tansu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, P. F. Zhu, and W. Sun, \u201cPhysics of High Efficiency and Efficiency-Droop \u00a0in \u00a0III-Nitride \u00a0Light-Emitting \u00a0Diodes,\u201d \u00a0Proc. \u00a0of \u00a0the \u00a0<em>Progress \u00a0In \u00a0Electromagnetics \u00a0Research Symposium (PIERS) 2014<\/em>, Guangzhou, China, August 2014.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cDilute-P GaNP Semiconductor Alloy for Visible Light Emitter,\u201d Proc. of the<em>\u00a0American Physical Society (APS) Annual March Meeting 2015<\/em>, San Antonio, Texas, USA, March 2015.<\/li>\n\n\n\n<li>N. A. Lacroce, G. Y. Liu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, R. A. Arif, S. M. Lee, and N. Tansu, \u201cEffect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes,\u201d Proc. of the<em>\u00a0American Physical Society (APS) Annual March Meeting 2015<\/em>, San Antonio, Texas, USA, March 2015.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cArtifically-Engineered III-Nitride Digital Alloy for Solar Energy Harvesting,\u201d Proc. of the<em>\u00a0American Physical Society (APS) Annual March Meeting 2015<\/em>, San Antonio, Texas, USA, March 2015.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cInGaN-GaNAs Active Region for Visible Light Emitters in Red Spectral Regime,\u201d\u00a0<em>Proc. of the MRS International Conference on Materials for Advanced Technologies (ICMAT) 2015<\/em>, Singapore, Republic of Singapore, June 2015.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cBarrier Engineering in AlGaN-Delta-GaN Heterostructure for Deep UV Emitters,\u201d Proc. of the<em>\u00a0MRS International Conference on Materials for Advanced Technologies (ICMAT) 2015<\/em>, Singapore, Republic of Singapore, June 2015.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cDesign Analysis of InGaN-GaNAs Active Region for Long Wavelength Visible Emission,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2015<\/em>, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2015.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cPhysics of Artificially-Engineered AlGaN and InGaN Based Digital Alloys,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2015<\/em>, Low Dimensional Materials and Devices, San Diego, CA, August 2015.<\/li>\n\n\n\n<li>N. A. Lacroce, G. Y. Liu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, R. A. Arif, S. M. Lee, and N. Tansu, \u201cUnderstanding the Dopant Activation for Improved Manufacturing Yield in InGaN-Based Light Emitting Diodes,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2015<\/em>, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2015.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, Z. J. Zhao, and N. Tansu, \u201cUsing Dilute-P GaNP Alloy as Improved Visible Active Region,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2015<\/em>, Active Photonic Materials, San Diego, CA, August 2015.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cAuger Recombination in Nanoscale III-Nitride Material System,\u201d Proc. of the\u00a0<em>SPIE Optics + Photonics 2015<\/em>, Nanoengineering: Fabrication, Properties, Optics, and Devices XII, San Diego, CA, August 2015.<\/li>\n\n\n\n<li><strong>(Invited Conference Paper)<\/strong>\u00a0N. Tansu,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and J. Wierer, \u201cTutorial on III-Nitride Solid State Lighting and Smart Lighting\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2015<\/em>, Reston, VA, October 2015.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cGain and Spontaneous Emission Characteristics of AlInN Quantum Well for Deep Ultraviolet Emitters\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2015<\/em>, Reston, VA, October 2015.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cDilute-As AlNAs Semiconductor for Ultraviolet Emitters\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2015<\/em>, Arlington, VA, October 2015.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cArtificially Engineered InGaN-Based Digital Alloy for Optoelectronics\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2015<\/em>, Reston, VA, October 2015.<\/li>\n\n\n\n<li>B. A. Krick, G. Zeng,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cSurprisingly Low Wear Behaviour of Gallium Nitride\u201d,\u00a0<em>2015 STLE Tribology Frontiers Conference<\/em>, Denver, CO, October 2015.<\/li>\n\n\n\n<li><strong>(Invited Conference Paper)<\/strong>\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cDilute-As GaNAs Quantum Wells for Visible Lasers with Reduced Auger Recombination\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2016<\/em>, Novel In-Plane Semiconductor Lasers XV, San Francisco, February 2016.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, and N. Tansu, \u201cBand Gap Narrowing with Dilute-Anion GaN Materials for Visible Emission\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2016<\/em>, Gallium Nitride Materials and Devices XI, San Francisco, CA, February 2016.<\/li>\n\n\n\n<li>G. S. Zeng,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, B. A. Krick, and N. Tansu, \u201cInvestigation of Mechanical Wear Rates in III-Nitride Materials\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2016<\/em>, Gallium Nitride Materials and Devices XI, San Francisco, CA, February 2016.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cAlGaN Digital Alloys for Deep-Ultraviolet Application\u201d, Proc. of the\u00a0<em>SPIE<\/em>\u00a0<em>Photonics West 2016<\/em>, Physics and Simulation of Optoelectronic Devices XXIV, San Francisco, CA, February 2016.<\/li>\n\n\n\n<li>I. Fragkos,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, V. Dierolf, Y. Fujiwara, and N. Tansu, \u201cRare-Earth Doped GaN Based Light Emitting Diode: A Model of Current Injection Efficiency\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2016<\/em>, Physics and Simulation of Optoelectronic Devices XXIV, San Francisco, CA, February 2016.<\/li>\n\n\n\n<li><strong>(Invited \u2013 Student Award Winner)<\/strong>\u00a0<strong><u>C. K. Tan<\/u><\/strong>, W. Sun, D. Borovac, J. J. Wierer, Jr., and N. Tansu, \u201cInGaN-GaNAs \u2018Interface Quantum Well\u2019 for Long-Wavelength Emission\u201d, DOE R&amp;D Workshop on Solid State Lighting 2016, Raleigh, NC, USA, February 2016.<\/li>\n\n\n\n<li>G. S. Zeng,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, N. Tansu and\u00a0B. A. Krick, \u201cWear Mechanism of III-Nitride Semiconductor Materials\u201d, Proc. of the\u00a0<em>Society of Tribologists and Lubrication Engineers Annual Meeting (STLE) 2016<\/em>, Las Vegas, NV, USA, May 2016.<\/li>\n\n\n\n<li>G. S. Zeng,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, N. Tansu and\u00a0B. A. Krick, \u201cHumidity Effect on Wear Performance of Gallium Nitride\u201d, Poster Session Presented at: Proc. of the\u00a0<em>Society of Tribologists and Lubrication Engineers Annual Meeting (STLE) 2016<\/em>, Las Vegas, NV, USA, May 2016.<\/li>\n\n\n\n<li>G. S. Zeng,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, N. Tansu, and B. A. Krick, \u201cUltralow Wear of Gallium Nitride\u201d, The 58<sup>th<\/sup>\u00a0Electronic Materials Conference (EMC), Delaware, DE, USA, June 2016.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, W. Sun, D. Borovac, J. J. Wierer, and N. Tansu, \u201cElectronics Properties of Dilute-Anion III-Nitride Semiconductors for Light Emitters\u201d, Proc. of the IEEE Lester Eastman Conference on High Performance Devices 2016, Bethlehem, PA, August 2016.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, J. J. Wierer, Jr., and N. Tansu, \u201cMiniband Engineering in III-Nitride Digital Alloy for Broadband Device Applications\u201d, Proc. of the IEEE Lester Eastman Conference on High Performance Devices 2016, Bethlehem, PA, August 2016.<\/li>\n\n\n\n<li>I. E. Fragkos,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, Y. Zhong, V. Dierolf, Y. Fujiwara, and N. Tansu, \u201cUnderstanding the Current Injection Efficiency in Rare-Earth Doped GaN:Eu Red-Emitting Light Emitting Diodes\u201d, Proc. of the IEEE Lester Eastman Conference on High Performance Devices 2016, Bethlehem, PA, August 2016.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, W. Sun, D. Borovac, J. J. Wierer, and N. Tansu, \u201cHow Can Dilute-Anion III-Nitride Be Used for Light Emitters?\u201d,\u00a0<em>Proc. of the International Workshop on Nitride Semiconductors 2016 (IWN 2016),\u00a0<\/em>Orlando, FL, October 2016.<\/li>\n\n\n\n<li><strong>(Invited Conference Paper)\u00a0<u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cDilute-Anion III-Nitride: A Potential Visible Light Emitter\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2016<\/em>, Hawaii, October 2016.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, W. Sun, J. J. Wierer, Jr., and N. Tansu, \u201cHow the Interface Affects Auger Process in Quantum Wells?\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2017<\/em>, Novel In-Plane Semiconductor Lasers XVI, San Francisco, CA, February 2017.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, J. J. Wierer, Jr., and N. Tansu, \u201cUltra-broadband III-Nitride Digital Alloys Active Region for Optoelectronic Applications\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2017<\/em>, Physics and Simulation of Optoelectronic Devices XXV, San Francisco, CA, February 2017.<\/li>\n\n\n\n<li>I. Fragkos,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, Y. Zhong, V. Dierolf, Y. Fujiwara, and N. Tansu, \u201cOn the identification and understanding of limiting factors in IQE of GaN:Eu based PIN diodes for red light emission\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2017<\/em>, Physics and Simulation of Optoelectronic Devices XXV, San Francisco, CA, February 2017.<\/li>\n\n\n\n<li>I. Fragkos, Y. Zhong,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, V. Dierolf, Y. Fujiwara, and N. Tansu, \u201cEnhancement of Internal Quantum Efficiency of GaN:Eu based Red Light Emitters through Surface Plasmon Engineering\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2017<\/em>, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, San Francisco, CA, February 2017.<\/li>\n\n\n\n<li>D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cInvestigation of the Optical Properties of Dilute-As GaNAs Semiconductors\u201d, Proc. of the\u00a0<em>SPIE Photonics West 2017<\/em>, Gallium Nitride Materials and Devices XII, San Francisco, CA, February 2017.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, W. Sun, and N. Tansu, \u201cDilute-Anion Boron Nitride for Light Emitters\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2017<\/em>, Lake Buena Vista, Florida, October 2017.<\/li>\n\n\n\n<li>D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cInvestigation of Refractive Index in Dilute-P GaNP Alloys by First-Principle\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2017<\/em>, Lake Buena Vista, Florida, October 2017.<\/li>\n\n\n\n<li>I. Fragkos,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, V. Dierolf, Y. Fujiwara, and N. Tansu, \u201cEngineering the Internal Quantum Efficiency of GaN:Eu based Red Light Emitting Diodes\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2017<\/em>, Lake Buena Vista, Florida, October 2017.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cLattice-matched AlInN \/ GaN Digital Alloy for Mid- and Deep-Ultraviolet Applications\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2017<\/em>, Lake Buena Vista, Florida, October 2017.<\/li>\n\n\n\n<li>(Invited Conference Paper) N. Tansu, J. J. Wierer, Jr.,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and W. Sun \u201cNext Generation III-Nitride Materials and Devices \u2013 from Photonics to New Applications\u201d, Proc. of the OSA Solid State Lighting (SSL) Topical Meeting 2017, Boulder, CO, USA, November 2017.<\/li>\n\n\n\n<li>W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cValence Subband Engineering of AlInN\/GaN Digital Alloy for Polarization-Insensitive Applications in Mid- and Deep-UV Regime\u201d, Proc. of the SPIE Photonics West 2018, Physics and Simulation of Optoelectronic Devices XXVI, San Francisco, CA, Jan 2018.<\/li>\n\n\n\n<li>W. Sun, D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cCharacteristics of Dilute-As InGaNAs Quantum Wells for Laser Active Regions\u201d, Proc. of the SPIE Photonics West 2018, Novel In-Plane Semiconductor Lasers XVII, San Francisco, CA, Jan 2018.<\/li>\n\n\n\n<li>D. Borovac, W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cElectronic Properties of the Dilute-As InGaNAs Alloy by using First-Principle Calculations\u201d, Proc. of the SPIE Photonics West 2018, Gallium Nitride Materials and Devices XIII, San Francisco, CA, Jan 2018.<\/li>\n\n\n\n<li>D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cType-I and Type-II Band Alignment in Dilute-P GaNP \/ GaN Heterojunction\u201d, Proc. of the SPIE Photonics West 2018, Physics and Simulation of Optoelectronic Devices XXVI, San Francisco, CA, Jan 2018.<\/li>\n\n\n\n<li>J. C. Goodrich, D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cBand Anticrossing Model in Dilute-Anion III-nitride\u201d, Proc. of the SPIE Photonics West 2018, Novel In-Plane Semiconductor Lasers XVII, San Francisco, CA, Jan 2018.<\/li>\n\n\n\n<li>C. Emerson, D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cFirst-Principle Electronic Properties of Dilute-As AlNAs Nanosheets\u201d, Proc. of the SPIE Photonics West 2018, Physics and Simulation of Optoelectronic Devices XXVI, San Francisco, CA, Jan 2018.<\/li>\n\n\n\n<li>(Invited Conference Paper) N. Tansu, J. J. Wierer, Jr., W. Sun, I. Fragkos, J. C. Goodrich, D. Borovac, O. Ogidi-Ekoko, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cNext Generation III-Nitride Materials and Devices \u2013 from Photonics to New Applications\u201d, Proc. of the International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma 2018), Nagoya, Japan, March 2018.<\/li>\n\n\n\n<li>D. Borovac, W. Sun,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cDilute-As InGaNAs Quantum Wells for Red-Emitting Lasers\u201d, Proc. of the IEEE Photonics Conference 2018, Reston, VA, October 2018.<\/li>\n\n\n\n<li>J. C. Goodrich, D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cInvestigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys\u201d, Proc. of the IEEE Photonics Conference 2018, Reston, VA, October 2018.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, W. Sun, and N. Tansu, \u201cInGaN-GaNAs Interface Quantum Well with AlGaN Interlayer for Amber-Red Emitters\u201d, Proc. of the IEEE Photonics Conference 2018, Reston, VA, October 2018.<\/li>\n\n\n\n<li><strong><u>C. K. Tan<\/u><\/strong>, D. Borovac, W. Sun, and N. Tansu, \u201cDilute-As AlNAs Semiconductor with P-Type Dopants for Deep Ultraviolet Emitters\u201d, Proc. of the SPIE Photonics West 2019, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXIII, San Francisco, CA, Jan 2019.<\/li>\n\n\n\n<li>D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cFirst-Principle Optical and Electronic Properties of Dilute-P AlNP Semiconductors for Deep-UV Applications\u201d, Proc. of the SPIE Photonics West 2019, Physics and Simulation of Optoelectronic Devices XXVII, San Francisco, CA, Jan 2019.<\/li>\n\n\n\n<li>W. Sun, D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cLarge-Overlap Dilute-As InGaNAs Quantum Wells for Laser and LED\u201d, Proc. of the SPIE Photonics West 2019, Novel In-Plane Semiconductor Lasers XVIII, San Francisco, CA, Jan 2019.<\/li>\n\n\n\n<li>J. C. Goodrich, D. Borovac,\u00a0<strong><u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cBand Anticrossing in Dilute-Anion III-V Semiconductors\u201d, Proc. of the SPIE Photonics West 2019, Gallium Nitride Materials and Devices XIV, San Francisco, CA, Jan 2019.<\/li>\n\n\n\n<li>S. Ober, S. Austin, D. Crouse, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cNew Fiber Bragg Grating for Filtration of Orbital Angular Momentum Wave Modes\u201d, Proc. Of the SPIE Photonics West 2019, Optical Components and Materials XVI, San Francisco, CA, Jan 2019.<\/li>\n\n\n\n<li>X. L. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cFirst-Principle Electronic Properties of Monoclinic (AlxInyGa1-x-y)<sub>2<\/sub>O<sub>3<\/sub>\u00a0Alloys\u201d, International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Ottawa, Canada, Jul. 2019.<\/li>\n\n\n\n<li>X. L. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201c\u03b2-(InxGa1-x)2O3 alloys as active region for deep ultraviolet photodetector\u201d, Proc. Of the SPIE Optics and Photonics 2019, Wide Bandgap Materials, Devices, and Applications IV, San Diego, CA, Aug. 2019.<\/li>\n\n\n\n<li>X. L. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cEngineering Monoclinic (Al x In y Ga 1-x-y ) 2 O 3 for Ultraviolet Photodetector\u201d, Proc. of the IEEE Photonics Conference 2019, San Antonio, TX, Oct. 2019.<\/li>\n\n\n\n<li><strong>(Invited Conference Paper)\u00a0<u>C. K. Tan<\/u><\/strong>, and N. Tansu, \u201cProgress in Dilute-Anion III-Nitride Semiconductors\u201d, Proc. of the\u00a0<em>IEEE Photonics Conference 2019<\/em>, San Antonio, TX, October 2019.<\/li>\n\n\n\n<li><strong>[Moved to Dec 2020]<\/strong>\u00a0X. L. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cAlInGaO for Power Electronics\u201d, MRS Spring Meetings 2020, Phoenix, AZ, Apr. 2020.<\/li>\n\n\n\n<li><strong>[Moved to Dec 2020]<\/strong>\u00a0X. L. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cUnderstanding of AlInO ternary alloy for GaN Power Electronics\u201d, MRS Spring Meetings 2020, Phoenix, AZ, Apr. 2020.<\/li>\n\n\n\n<li>X. L. Liu, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cDFT study on the (B<sub>x<\/sub>Ga<sub>1-x<\/sub>)<sub>2<\/sub>O<sub>3<\/sub>\u00a0Alloys\u201d, SPIE Photonics West 2021, San Francisco, CA, Mar. 2021.<\/li>\n\n\n\n<li>Z. Henderson, C. Sammarco, X. L. Liu, D. Borovac, and\u00a0<strong><u>C. K. Tan<\/u><\/strong>, \u201cGaN biosensor design with localized surface plasmon resonance\u201d, SPIE Photonics West 2021, San Francisco, CA, Mar. 2021.<\/li>\n\n\n\n<li>X. L. Liu, H. Bilan,\u00a0<strong>C. K. Tan<\/strong>, \u201cExperimental Investigation on Selenium Ion-Implanted Gallium Oxide\u201d, SPIE Photonics West 2021, San Francisco, CA, Mar. 2021.<\/li>\n<\/ul>\n\n\n\n<h2 class=\"wp-block-heading\" id=\"Invention\">Patent or Invention Disclosures<\/h2>\n\n\n\n<ul>\n<li>Nelson Tansu, Wei Sun, and\u00a0Chee-Keong Tan, Artificially Engineered III-Nitride Digital Alloy. (US Patent approved: US patent number 10347722).<\/li>\n<\/ul>\n","protected":false},"excerpt":{"rendered":"<p>Refereed Journal Publications Refereed Conference Publi &hellip; <\/p>\n<p class=\"link-more\"><a href=\"http:\/\/cheekeongtan.people.ust.hk\/?page_id=1056\" class=\"more-link\">\u7ee7\u7eed\u9605\u8bfb<span class=\"screen-reader-text\">\u201cPublications\u201d<\/span><\/a><\/p>\n","protected":false},"author":3,"featured_media":0,"parent":0,"menu_order":0,"comment_status":"closed","ping_status":"closed","template":"","meta":{"footnotes":""},"_links":{"self":[{"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=\/wp\/v2\/pages\/1056"}],"collection":[{"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=\/wp\/v2\/pages"}],"about":[{"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=\/wp\/v2\/types\/page"}],"author":[{"embeddable":true,"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=\/wp\/v2\/users\/3"}],"replies":[{"embeddable":true,"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=%2Fwp%2Fv2%2Fcomments&post=1056"}],"version-history":[{"count":2,"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=\/wp\/v2\/pages\/1056\/revisions"}],"predecessor-version":[{"id":1059,"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=\/wp\/v2\/pages\/1056\/revisions\/1059"}],"wp:attachment":[{"href":"http:\/\/cheekeongtan.people.ust.hk\/index.php?rest_route=%2Fwp%2Fv2%2Fmedia&parent=1056"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}