Publications

Refereed Journal Publications

  • C. K. Tan, J. Zhang, X. H. Li, G. Y. Liu, B. O. Tayo, and N. Tansu, “First-Principle Electronic Properties of Dilute-As GaNAs Alloy for Visible Light Emitters”, IEEE / OSA Journal of Display Technology, vol. 9, no. 4, pp. 272-279, April 2013. DOI: 10.1109/JDT.2013.2248342
  • G. Y. Liu, J. Zhang, C. K. Tan, and N. Tansu, “Efficiency-Droop Suppression by Using Large-Bandgap AlGaInN Thin Barrier Layers in InGaN Quantum Wells Light-Emitting Diodes”, IEEE Photonics Journal, vol. 5, no. 2, Art. 2201011, April 2013. DOI: 10.1109/JPHOT.2013.2255028
  • C. K. Tan, and N. Tansu, “First-Principle Natural Band Alignment of GaN / Dilute-As GaNAs Alloy,” AIP Advances, vol. 5, no. 1, p. 017129, January 2015. DOI: 10.1063/1.4906569
  • (Invited Paper) C. K. Tan, and N. Tansu, “Nanostructured Lasers: Electrons and Holes Get Closer,” Nature Nanotechnology, vol. 10, no. 2, pp. 107-109, February 2015. DOI: 10.1038/nnano.2014.333
  • C. K. Tan, and N. Tansu, “Auger Recombination Rates in Dilute-As GaNAs Semiconductor”, AIP Advances, vol. 5, no. 5, p. 057135, May 2015. DOI: 10.1063/1.4921394
  • P. F. Zhu, C. K. Tan, W. Sun, and N. Tansu, “Aspect Ratio Engineering of Microlens Arrays in Thin-Film Flip-Chip Light-Emitting Diodes”, Applied Optics, vol. 54, no. 34, pp. 10299-10303, November 2015. DOI: 10.1364/AO.54.010299
  • C. K. Tan, D. Borovac, W. Sun and N. Tansu, “InGaN / Dilute-As GaNAs Interface Quantum Well for Red Emitters”, Scientific Reports [Nature Publishing Group], vol. 6, Art. 19271, January 2016. DOI: 10.1038/srep19271.
  • C. K. Tan, D. Borovac, W. Sun and N. Tansu, “Dilute-As AlNAs Alloy for Deep Ultraviolet Emitters”, Scientific Reports [Nature Publishing Group], vol. 6, Art. 22215, February 2016. DOI: 10.1038/srep22215
  • C. K. Tan, W. Sun, D. Borovac and N. Tansu, “Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters”, Scientific Reports [Nature Publishing Group], vol. 6, Art. 22983, March 2016. DOI: 10.1038/srep22983
  • P. F. Zhu, H. Zhu, W. Qin, B. H. Dantas, W. Sun, C. K. Tan, and N. Tansu, “Narrow-Linewidth Red-Emission Eu3+-Doped TiO2 Spheres for Light-Emitting Diodes”, J. Appl. Phys., vol. 119, Art. 124305, March 2016.
  • C. K. Tan, D. Borovac, W. Sun, and N. Tansu, “First-Principle Electronic Properties of Dilute-P GaN1-xPx Alloy for Visible Light Emitters”, Scientific Reports [Nature Publishing Group], vol. 6, Art. 24412, April 2016. DOI: 10.1038/srep24412
  • G. Zeng, C. K. Tan, N. Tansu, and B. A. Krick, “Ultralow Wear of Gallium Nitride”, Applied Physics Letters, vol. 109, Art. 051602, August 2016. DOI: 10.1063/1.4960375
  • C. K. Tan, W. Sun, J. J. Wierer, Jr., and N. Tansu, “Effect of Interface Roughness on Auger Recombination Rates”, AIP Advances, vol. 7, Art. 035212, March 2017. DOI:10.1063/1.4978777
  • W. Sun, C. K. Tan, and N. Tansu, “III-Nitride Digital Alloy: Electronics and Optoelectronics Properties of the InN/GaN Ultra-Short Period Superlattice Nanostructures”, Scientific Reports [Nature Publishing Group], vol. 7, Art. 6671, July 2017. DOI: 10.1038/s41598-017-06889-3
  • W. Sun, C. K. Tan, and N. Tansu, “AlN/GaN Digital Alloy for Mid- and Deep-Ultraviolet Optoelectronics” Scientific Reports [Nature Publishing Group], vol. 7, Art. 11826, September 2017. DOI:10.1038/s41598-017-12125-9
  • I. E. Fragkos, C. K. Tan, Y. Fujiwara, V. Dierolf, and N. Tansu, “Pathway Towards High-Efficiency Eu-doped GaN Light-Emitting Diodes,” Scientific Reports [Nature Publishing Group], vol. 7, Art. 14648, November 2017. DOI: 10.1038/s41598-017-15302-y
  • D. Borovac, C. K. Tan, and N. Tansu, “Investigations of the Optical Properties of GaNAs Alloys by First-Principle,” Scientific Reports [Nature Publishing Group], vol. 7, Art. 17285, December 2017. DOI: 10.1038/s41598-017-17504-w
  • W. Sun, C. K. Tan, J. J. Wierer, Jr., and N. Tansu, “Ultra-Broadband Optical Gain in III-Nitride Digital Alloys,” Scientific Reports [Nature Publishing Group], vol. 8, Art. 3109, February 2018. DOI: 10.1038/s41598-018-21434-6
  • D. Borovac, C. K. Tan, and N. Tansu, “Optical Properties and Refractive Indices of GaN1-xPx Alloys,” Scientific Reports [Nature Publishing Group], vol. 8, Art. 6025, April 2018. DOI: 10.1038/s41598-018-24384-1
  • G. S. Zeng, X. F. Yang, C. K. Tan, C. J. Marvel, B. E. Koel, N. Tansu, and B. A. Krick, “Shear-Induced Band Bending in Gallium Nitride,” ACS Applied Materials & Interfaces, vol. 10, no. 34, pp. 29048-29057, June 2018. DOI: 10.1021/acsami.8b02271
  • D. Borovac, C. K. Tan, and N. Tansu, “First-Principle Electronic Properties of Dilute-P AlNP Deep Ultraviolet Semiconductor”, AIP Advances, vol. 8, Art. 085119, August 2018. DOI: 10.1063/1.5036978
  • X. Liu, and C. K. Tan, “Electronic Properties of Monoclinic (InxGa1-x)2O3 Alloys by First Principle”, AIP Advances, vol. 9, Art. 035318, March 2019. DOI:10.1063/1.5093195
  • J. Goodrich, D. Borovac, C. K. Tan, and N. Tansu, “Band Anti-Crossing Model in Dilute-As GaNAs Alloys”, Scientific Reports [Nature Publishing Group], vol. 9, Art. 5128, March 2019. DOI: 10.1063/1.5086979
  • Z. Liu, X. Wang, Y. Liu, D. Y. Guo, S. Li, Z. Yan, C. K. Tan, W. Li, P. Li, and W. Tang, “High Performance Deep-UV Solar-Blind Photodetector Based on β-Ga2O3 Schottky Photodiode”, J. Mat. Chem. C, October 2019 DOI: 10.1039/c9tc04912f
  • X. Liu, and C. K. Tan, “Structural and Electronic Properties of Dilute-Selenide Gallium Oxide”, AIP Advances, AIP Advances, vol. 9, p. 125204, Dec. 2019. DOI: 10.1063/1.5128675
  • D. Borovac, W. Sun, C. K. Tan, and N. Tansu, “First-Principle Electronic Properties of Dilute-As InGaNAs Alloys”, J. Appl. Phys., vol. 127, p. 015103, Jan. 2020. DOI: 10.1063/1.5119371
  • X. Liu, and C. K. Tan, “First-Principle Investigation of Monoclinic (AlxInyGa1-x-y)2O3 Quaternary Alloys”, Semiconductor Science and Technology, vol. 35, p. 025023, Jan. 2020. DOI: 10.1088/1361-6641/ab607c
  • S. Ober, S. Austin, D. Crouse, and C. K. Tan, “New Fiber Bragg Grating for Filtration of Orbital Angular Momentum Wave Modes”, AIP Advances, vol. 10, no. 2, Feb. 2020. DOI: 10.1063/1.5126610
  • C. Wu, D. Y. Guo, L. Y. Zhang, P. G. Li, F. B. Zhang, C. K. Tan, S. L. Wang, A. P. Liu, F. M. Wu, and W. H. Tang, “Systematic investigation of the growth kinetics of β-Ga2O3 epilayer by plasma enhanced chemical vapor deposition”, Appl. Phys. Lett., vol. 116, no. 7, p. 072102, Feb. 2020. DOI: 10.1063/1.5142196
  • D. Y. Guo, K. Chen, S. L. Wang, F. M. Wu, A. P. Liu, C. R. Li, P. G. Li, C. K. Tan, and W. H. Tang, “Self-powered solar-blind photodetectors based on Ga2O3 phase junctions”, Phys. Rev. Appl., vol. 13, p. 024051, Feb. 2020. DOI: 10.1103/13.024051
  • X. Liu, C. Sammarco, G. Zeng, D. Guo, W. H. Tang, and C. K. Tan, “Investigations of monoclinic- and orthorhombic-based (BxGa1−x)2O3 alloys”, Appl. Phys. Lett., vol. 117, p. 012104, Jul. 2020. DOI:/ 10.1063/5.0005808
  • J. Goodrich, C. K. Tan, D. Borovac, and N. Tansu, “Prospects for hole doping in dilute-anion III-nitrides”, Appl. Phys. Lett., vol. 118, p. 072106, Feb. 2021.
  • X. L. Liu, S.Ober, W. Tang, and C. K. Tan, “Large bandgap tuning in corundum Al2(O1−xSex)3”, Journal of Materials Chemistry C, 9(23), pp.7436-7443. 2021
  • W. Sun, H. Fu, D. Borovac, J. Goodrich, C. K. Tan, and N. Tansu, “Dilute-As InGaNAs / GaN quantum wells for high-efficiency red emitters”, IEEE Journal of Quantum Electronics, vol. 58, no. 2, p. 3000106, Jan. 2022.

Refereed Conference Publications/Presentations

  • C. L. Tan, H. S. Djie, C. K. Tan, V. Hongpinyo, Y. H. Ding, and B. S. Ooi, “The Effect of Multi Active Junctions on Broadband Emission from InAs/InGaAlAs Quantum-dash Structure”, The 22nd Annual Meeting of the IEEE Photonics Society (IEEE PS’09), Belek-Antalya, Turkey, (2009).
  • C. L. Tan, H. S. Djie, C. K. Tan, and B. S. Ooi, “Unique Lasing Mechanism of Localized Dispersive Nanostructures in InAs/InGaAlAs Quantum Dash Broad Interband Laser”, Novel In-Plane Semiconductor Lasers IX conference, SPIE Photonics West 2010, San Francisco, CA, USA, (2010).
  • C. L. Tan, C. K. Tan, H. S. Djie, and B. S. Ooi, “Absence of Quantized Energy-states Local Diffusion in Semiconductor Quantum Dash structures”, IEEE/OSA Conference on Lasers and Electro-Optics 2010 (IEEE CLEO/QELS’10), San Jose, California, (2010).
  • (Invited Conference Talk) N. Tansu, J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, and H. P. Zhao, “Advances in III-Nitride Semiconductors for Energy Efficiency Applications,” Proc. of the KAUST-UCSB-NSF Solid State Lighting Workshop 2012, Thuwal, Saudi Arabia, February 2012.
  • (Invited Keynote Plenary Conference Talk) N. Tansu, J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, and H. P. Zhao, “Physics and Technology of III-Nitride Semiconductors for Energy Efficiency Applications,” Proc. of the IUMRS-ICYRAM Conference 2012, Material Research Society (MRS), Singapore, July 2012.
  • (Invited Conference Paper) J. Zhang, G. Y. Liu, C. K. Tan, P. F. Zhu, H. P. Zhao, andN. Tansu, “Engineering Nanostructures in Active Regions and Devices for High-Efficiency III-Nitride Light-Emitting Diodes – Epitaxy and Physics,” Proc. of the SPIE Optics + Photonics 2012, NanoEpitaxy : Materials and Devices IV, San Diego, CA, August 2012.
  • C. K. Tan, J. Zhang, X. H. Li, G. Y. Liu, and N. Tansu, “Dilute-As GaNAs Semiconductor for Visible Emitters,” Proc. of the IEEE Photonics Conference 2012, Burlingame, CA, September 2012.
  • G. Y. Liu, J. Zhang, C. K. Tan, and N. Tansu, “Characteristics of InGaN Quantum Wells Light-Emitting Diodes with Thin AlGaInN Barrier Layers,” Proc. of the IEEE Photonics Conference 2012, Burlingame, CA, September 2012.
  • (Invited Conference Paper) N. Tansu, J. Zhang, G. Y. Liu, H. P. Zhao, C. K. Tan, and P. F. Zhu, “Physics of High-Efficiency III-Nitride Quantum Wells Light-Emitting Diodes,” Proc. of the Asian Communications and Photonics (ACP) Conference 2012, Guangzhou, China, November 2012.
  • G. Y. Liu, J. Zhang, C. K. Tan, and N. Tansu, “InGaN-Delta-InN Quantum Well Light-Emitting Diodes with Carrier Transport Effect,” Proc. of the SPIE Photonics West 2013, San Francisco, CA, February 2013.
  • C. K. Tan, J. Zhang, G. Y. Liu, and N. Tansu, “Effect of Interband Energy Separation on the Interband Auger Processes in III-Nitride Semiconductors,” Proc. of the SPIE Photonics West 2013, San Francisco, CA, February 2013.
  • (Tutorial Conference Paper) N. Tansu, J. Zhang, G. Y. Liu, H. P. Zhao, C. K. Tan, and P. F. Zhu, “Internal and External Efficiency in InGaN-Based Light-Emitting Diodes,” Proc. of the Asian Communications and Photonics (ACP) Conference 2013, Beijing, China, November 2013.
  • P. F. Zhu, C. K. Tan, and N. Tansu, “Extraction Efficiency Enhancement of Thin-Film Flip-Chip GaN Light-Emitting Diodes with Self-Assembled Microsphere Arrays,” Proc. of the International Conference on White LEDs and Solid State Lighting (WLED 5) Conference 2014, Jeju, Korea, June 2014.
  • C. K. Tan, P. F. Zhu, and N. Tansu, “Investigation of Dilute-As GaNAs Active Regions for High Efficiency GaN-based Light-Emitting Diodes,” Proc. of the International Conference on White LEDs and Solid State Lighting (WLED 5) Conference 2014, Jeju, Korea, June 2014.
  • C. K. Tan, P. F. Zhu, and N. Tansu, “Controlling the Interband Auger Recombination Mechanism in III-Nitride Based Ternary Active Regions,” Proc. of the SPIE Optics + Photonics 2014, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.
  • P. F. Zhu, C. K. Tan, and N. Tansu, “Comparison of Extraction Efficiency for Thin-Film Flip-Chip InGaN Light-Emitting Diodes with Microsphere and Microconcave Array Structures,” Proc. of the SPIE Optics + Photonics 2014, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.
  • P. F. Zhu, H. Y. Zhu, W. P. Qin, C. K. Tan, and N. Tansu, “Eu3+-doped TiO2 Nanospheres for GaN-based White Light-Emitting Diodes,” Proc. of the SPIE Optics + Photonics 2014, Thirteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2014.
  • P. F. Zhu, T. Toma, C. K. Tan, and N. Tansu, “Investigation of Solar Hydrogen Generation from the GaN and InGaN Thin Films,” Proc. of the SPIE Optics + Photonics 2014, Solar Energy + Technology, San Diego, CA, August 2014.
  • (Invited Conference Paper) P. F. Zhu, W. Sun, C. K. Tan, and N. Tansu, “Light Extraction Efficiency Enhancement in GaN-Based LEDs with Self-Assembly Approach,” Proc. of the Progress In Electromagnetics Research Symposium (PIERS) 2014, Guangzhou, China, August 2014.
  • (Invited Keynote Conference Paper) N. Tansu, C. K. Tan, P. F. Zhu, and W. Sun, “Physics of High Efficiency and Efficiency-Droop  in  III-Nitride  Light-Emitting  Diodes,”  Proc.  of  the  Progress  In  Electromagnetics  Research Symposium (PIERS) 2014, Guangzhou, China, August 2014.
  • C. K. Tan, and N. Tansu, “Dilute-P GaNP Semiconductor Alloy for Visible Light Emitter,” Proc. of the American Physical Society (APS) Annual March Meeting 2015, San Antonio, Texas, USA, March 2015.
  • N. A. Lacroce, G. Y. Liu, C. K. Tan, R. A. Arif, S. M. Lee, and N. Tansu, “Effect of Dopant Activation on Device Characteristics of InGaN-based Light Emitting Diodes,” Proc. of the American Physical Society (APS) Annual March Meeting 2015, San Antonio, Texas, USA, March 2015.
  • W. Sun, C. K. Tan, and N. Tansu, “Artifically-Engineered III-Nitride Digital Alloy for Solar Energy Harvesting,” Proc. of the American Physical Society (APS) Annual March Meeting 2015, San Antonio, Texas, USA, March 2015.
  • C. K. Tan, and N. Tansu, “InGaN-GaNAs Active Region for Visible Light Emitters in Red Spectral Regime,” Proc. of the MRS International Conference on Materials for Advanced Technologies (ICMAT) 2015, Singapore, Republic of Singapore, June 2015.
  • C. K. Tan, and N. Tansu, “Barrier Engineering in AlGaN-Delta-GaN Heterostructure for Deep UV Emitters,” Proc. of the MRS International Conference on Materials for Advanced Technologies (ICMAT) 2015, Singapore, Republic of Singapore, June 2015.
  • C. K. Tan, and N. Tansu, “Design Analysis of InGaN-GaNAs Active Region for Long Wavelength Visible Emission,” Proc. of the SPIE Optics + Photonics 2015, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2015.
  • W. Sun, C. K. Tan, and N. Tansu, “Physics of Artificially-Engineered AlGaN and InGaN Based Digital Alloys,” Proc. of the SPIE Optics + Photonics 2015, Low Dimensional Materials and Devices, San Diego, CA, August 2015.
  • N. A. Lacroce, G. Y. Liu, C. K. Tan, R. A. Arif, S. M. Lee, and N. Tansu, “Understanding the Dopant Activation for Improved Manufacturing Yield in InGaN-Based Light Emitting Diodes,” Proc. of the SPIE Optics + Photonics 2015, Fourteenth International Conference on Solid State Lighting and LED-based Illumination Systems, San Diego, CA, August 2015.
  • C. K. Tan, Z. J. Zhao, and N. Tansu, “Using Dilute-P GaNP Alloy as Improved Visible Active Region,” Proc. of the SPIE Optics + Photonics 2015, Active Photonic Materials, San Diego, CA, August 2015.
  • C. K. Tan, and N. Tansu, “Auger Recombination in Nanoscale III-Nitride Material System,” Proc. of the SPIE Optics + Photonics 2015, Nanoengineering: Fabrication, Properties, Optics, and Devices XII, San Diego, CA, August 2015.
  • (Invited Conference Paper) N. Tansu, C. K. Tan, and J. Wierer, “Tutorial on III-Nitride Solid State Lighting and Smart Lighting”, Proc. of the IEEE Photonics Conference 2015, Reston, VA, October 2015.
  • C. K. Tan, and N. Tansu, “Gain and Spontaneous Emission Characteristics of AlInN Quantum Well for Deep Ultraviolet Emitters”, Proc. of the IEEE Photonics Conference 2015, Reston, VA, October 2015.
  • C. K. Tan, and N. Tansu, “Dilute-As AlNAs Semiconductor for Ultraviolet Emitters”, Proc. of the IEEE Photonics Conference 2015, Arlington, VA, October 2015.
  • W. Sun, C. K. Tan, and N. Tansu, “Artificially Engineered InGaN-Based Digital Alloy for Optoelectronics”, Proc. of the IEEE Photonics Conference 2015, Reston, VA, October 2015.
  • B. A. Krick, G. Zeng, C. K. Tan, and N. Tansu, “Surprisingly Low Wear Behaviour of Gallium Nitride”, 2015 STLE Tribology Frontiers Conference, Denver, CO, October 2015.
  • (Invited Conference Paper) C. K. Tan, and N. Tansu, “Dilute-As GaNAs Quantum Wells for Visible Lasers with Reduced Auger Recombination”, Proc. of the SPIE Photonics West 2016, Novel In-Plane Semiconductor Lasers XV, San Francisco, February 2016.
  • C. K. Tan, D. Borovac, and N. Tansu, “Band Gap Narrowing with Dilute-Anion GaN Materials for Visible Emission”, Proc. of the SPIE Photonics West 2016, Gallium Nitride Materials and Devices XI, San Francisco, CA, February 2016.
  • G. S. Zeng, C. K. Tan, B. A. Krick, and N. Tansu, “Investigation of Mechanical Wear Rates in III-Nitride Materials”, Proc. of the SPIE Photonics West 2016, Gallium Nitride Materials and Devices XI, San Francisco, CA, February 2016.
  • W. Sun, C. K. Tan, and N. Tansu, “AlGaN Digital Alloys for Deep-Ultraviolet Application”, Proc. of the SPIE Photonics West 2016, Physics and Simulation of Optoelectronic Devices XXIV, San Francisco, CA, February 2016.
  • I. Fragkos, C. K. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu, “Rare-Earth Doped GaN Based Light Emitting Diode: A Model of Current Injection Efficiency”, Proc. of the SPIE Photonics West 2016, Physics and Simulation of Optoelectronic Devices XXIV, San Francisco, CA, February 2016.
  • (Invited – Student Award Winner) C. K. Tan, W. Sun, D. Borovac, J. J. Wierer, Jr., and N. Tansu, “InGaN-GaNAs ‘Interface Quantum Well’ for Long-Wavelength Emission”, DOE R&D Workshop on Solid State Lighting 2016, Raleigh, NC, USA, February 2016.
  • G. S. Zeng, C. K. Tan, N. Tansu and B. A. Krick, “Wear Mechanism of III-Nitride Semiconductor Materials”, Proc. of the Society of Tribologists and Lubrication Engineers Annual Meeting (STLE) 2016, Las Vegas, NV, USA, May 2016.
  • G. S. Zeng, C. K. Tan, N. Tansu and B. A. Krick, “Humidity Effect on Wear Performance of Gallium Nitride”, Poster Session Presented at: Proc. of the Society of Tribologists and Lubrication Engineers Annual Meeting (STLE) 2016, Las Vegas, NV, USA, May 2016.
  • G. S. Zeng, C. K. Tan, N. Tansu, and B. A. Krick, “Ultralow Wear of Gallium Nitride”, The 58th Electronic Materials Conference (EMC), Delaware, DE, USA, June 2016.
  • C. K. Tan, W. Sun, D. Borovac, J. J. Wierer, and N. Tansu, “Electronics Properties of Dilute-Anion III-Nitride Semiconductors for Light Emitters”, Proc. of the IEEE Lester Eastman Conference on High Performance Devices 2016, Bethlehem, PA, August 2016.
  • W. Sun, C. K. Tan, J. J. Wierer, Jr., and N. Tansu, “Miniband Engineering in III-Nitride Digital Alloy for Broadband Device Applications”, Proc. of the IEEE Lester Eastman Conference on High Performance Devices 2016, Bethlehem, PA, August 2016.
  • I. E. Fragkos, C. K. Tan, Y. Zhong, V. Dierolf, Y. Fujiwara, and N. Tansu, “Understanding the Current Injection Efficiency in Rare-Earth Doped GaN:Eu Red-Emitting Light Emitting Diodes”, Proc. of the IEEE Lester Eastman Conference on High Performance Devices 2016, Bethlehem, PA, August 2016.
  • C. K. Tan, W. Sun, D. Borovac, J. J. Wierer, and N. Tansu, “How Can Dilute-Anion III-Nitride Be Used for Light Emitters?”, Proc. of the International Workshop on Nitride Semiconductors 2016 (IWN 2016), Orlando, FL, October 2016.
  • (Invited Conference Paper) C. K. Tan, and N. Tansu, “Dilute-Anion III-Nitride: A Potential Visible Light Emitter”, Proc. of the IEEE Photonics Conference 2016, Hawaii, October 2016.
  • C. K. Tan, W. Sun, J. J. Wierer, Jr., and N. Tansu, “How the Interface Affects Auger Process in Quantum Wells?”, Proc. of the SPIE Photonics West 2017, Novel In-Plane Semiconductor Lasers XVI, San Francisco, CA, February 2017.
  • W. Sun, C. K. Tan, J. J. Wierer, Jr., and N. Tansu, “Ultra-broadband III-Nitride Digital Alloys Active Region for Optoelectronic Applications”, Proc. of the SPIE Photonics West 2017, Physics and Simulation of Optoelectronic Devices XXV, San Francisco, CA, February 2017.
  • I. Fragkos, C. K. Tan, Y. Zhong, V. Dierolf, Y. Fujiwara, and N. Tansu, “On the identification and understanding of limiting factors in IQE of GaN:Eu based PIN diodes for red light emission”, Proc. of the SPIE Photonics West 2017, Physics and Simulation of Optoelectronic Devices XXV, San Francisco, CA, February 2017.
  • I. Fragkos, Y. Zhong, C. K. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu, “Enhancement of Internal Quantum Efficiency of GaN:Eu based Red Light Emitters through Surface Plasmon Engineering”, Proc. of the SPIE Photonics West 2017, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXI, San Francisco, CA, February 2017.
  • D. Borovac, C. K. Tan, and N. Tansu, “Investigation of the Optical Properties of Dilute-As GaNAs Semiconductors”, Proc. of the SPIE Photonics West 2017, Gallium Nitride Materials and Devices XII, San Francisco, CA, February 2017.
  • C. K. Tan, D. Borovac, W. Sun, and N. Tansu, “Dilute-Anion Boron Nitride for Light Emitters”, Proc. of the IEEE Photonics Conference 2017, Lake Buena Vista, Florida, October 2017.
  • D. Borovac, C. K. Tan, and N. Tansu, “Investigation of Refractive Index in Dilute-P GaNP Alloys by First-Principle”, Proc. of the IEEE Photonics Conference 2017, Lake Buena Vista, Florida, October 2017.
  • I. Fragkos, C. K. Tan, V. Dierolf, Y. Fujiwara, and N. Tansu, “Engineering the Internal Quantum Efficiency of GaN:Eu based Red Light Emitting Diodes”, Proc. of the IEEE Photonics Conference 2017, Lake Buena Vista, Florida, October 2017.
  • W. Sun, C. K. Tan, and N. Tansu, “Lattice-matched AlInN / GaN Digital Alloy for Mid- and Deep-Ultraviolet Applications”, Proc. of the IEEE Photonics Conference 2017, Lake Buena Vista, Florida, October 2017.
  • (Invited Conference Paper) N. Tansu, J. J. Wierer, Jr., C. K. Tan, and W. Sun “Next Generation III-Nitride Materials and Devices – from Photonics to New Applications”, Proc. of the OSA Solid State Lighting (SSL) Topical Meeting 2017, Boulder, CO, USA, November 2017.
  • W. Sun, C. K. Tan, and N. Tansu, “Valence Subband Engineering of AlInN/GaN Digital Alloy for Polarization-Insensitive Applications in Mid- and Deep-UV Regime”, Proc. of the SPIE Photonics West 2018, Physics and Simulation of Optoelectronic Devices XXVI, San Francisco, CA, Jan 2018.
  • W. Sun, D. Borovac, C. K. Tan, and N. Tansu, “Characteristics of Dilute-As InGaNAs Quantum Wells for Laser Active Regions”, Proc. of the SPIE Photonics West 2018, Novel In-Plane Semiconductor Lasers XVII, San Francisco, CA, Jan 2018.
  • D. Borovac, W. Sun, C. K. Tan, and N. Tansu, “Electronic Properties of the Dilute-As InGaNAs Alloy by using First-Principle Calculations”, Proc. of the SPIE Photonics West 2018, Gallium Nitride Materials and Devices XIII, San Francisco, CA, Jan 2018.
  • D. Borovac, C. K. Tan, and N. Tansu, “Type-I and Type-II Band Alignment in Dilute-P GaNP / GaN Heterojunction”, Proc. of the SPIE Photonics West 2018, Physics and Simulation of Optoelectronic Devices XXVI, San Francisco, CA, Jan 2018.
  • J. C. Goodrich, D. Borovac, C. K. Tan, and N. Tansu, “Band Anticrossing Model in Dilute-Anion III-nitride”, Proc. of the SPIE Photonics West 2018, Novel In-Plane Semiconductor Lasers XVII, San Francisco, CA, Jan 2018.
  • C. Emerson, D. Borovac, C. K. Tan, and N. Tansu, “First-Principle Electronic Properties of Dilute-As AlNAs Nanosheets”, Proc. of the SPIE Photonics West 2018, Physics and Simulation of Optoelectronic Devices XXVI, San Francisco, CA, Jan 2018.
  • (Invited Conference Paper) N. Tansu, J. J. Wierer, Jr., W. Sun, I. Fragkos, J. C. Goodrich, D. Borovac, O. Ogidi-Ekoko, and C. K. Tan, “Next Generation III-Nitride Materials and Devices – from Photonics to New Applications”, Proc. of the International Symposium on Advanced Plasma Science and its Application for Nitrides and Nanomaterials (ISPlasma 2018), Nagoya, Japan, March 2018.
  • D. Borovac, W. Sun, C. K. Tan, and N. Tansu, “Dilute-As InGaNAs Quantum Wells for Red-Emitting Lasers”, Proc. of the IEEE Photonics Conference 2018, Reston, VA, October 2018.
  • J. C. Goodrich, D. Borovac, C. K. Tan, and N. Tansu, “Investigation of Band Anticrossing Parameters for Dilute-Anion III-Nitride Alloys”, Proc. of the IEEE Photonics Conference 2018, Reston, VA, October 2018.
  • C. K. Tan, D. Borovac, W. Sun, and N. Tansu, “InGaN-GaNAs Interface Quantum Well with AlGaN Interlayer for Amber-Red Emitters”, Proc. of the IEEE Photonics Conference 2018, Reston, VA, October 2018.
  • C. K. Tan, D. Borovac, W. Sun, and N. Tansu, “Dilute-As AlNAs Semiconductor with P-Type Dopants for Deep Ultraviolet Emitters”, Proc. of the SPIE Photonics West 2019, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXIII, San Francisco, CA, Jan 2019.
  • D. Borovac, C. K. Tan, and N. Tansu, “First-Principle Optical and Electronic Properties of Dilute-P AlNP Semiconductors for Deep-UV Applications”, Proc. of the SPIE Photonics West 2019, Physics and Simulation of Optoelectronic Devices XXVII, San Francisco, CA, Jan 2019.
  • W. Sun, D. Borovac, C. K. Tan, and N. Tansu, “Large-Overlap Dilute-As InGaNAs Quantum Wells for Laser and LED”, Proc. of the SPIE Photonics West 2019, Novel In-Plane Semiconductor Lasers XVIII, San Francisco, CA, Jan 2019.
  • J. C. Goodrich, D. Borovac, C. K. Tan, and N. Tansu, “Band Anticrossing in Dilute-Anion III-V Semiconductors”, Proc. of the SPIE Photonics West 2019, Gallium Nitride Materials and Devices XIV, San Francisco, CA, Jan 2019.
  • S. Ober, S. Austin, D. Crouse, and C. K. Tan, “New Fiber Bragg Grating for Filtration of Orbital Angular Momentum Wave Modes”, Proc. Of the SPIE Photonics West 2019, Optical Components and Materials XVI, San Francisco, CA, Jan 2019.
  • X. L. Liu, and C. K. Tan, “First-Principle Electronic Properties of Monoclinic (AlxInyGa1-x-y)2O3 Alloys”, International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), Ottawa, Canada, Jul. 2019.
  • X. L. Liu, and C. K. Tan, “β-(InxGa1-x)2O3 alloys as active region for deep ultraviolet photodetector”, Proc. Of the SPIE Optics and Photonics 2019, Wide Bandgap Materials, Devices, and Applications IV, San Diego, CA, Aug. 2019.
  • X. L. Liu, and C. K. Tan, “Engineering Monoclinic (Al x In y Ga 1-x-y ) 2 O 3 for Ultraviolet Photodetector”, Proc. of the IEEE Photonics Conference 2019, San Antonio, TX, Oct. 2019.
  • (Invited Conference Paper) C. K. Tan, and N. Tansu, “Progress in Dilute-Anion III-Nitride Semiconductors”, Proc. of the IEEE Photonics Conference 2019, San Antonio, TX, October 2019.
  • [Moved to Dec 2020] X. L. Liu, and C. K. Tan, “AlInGaO for Power Electronics”, MRS Spring Meetings 2020, Phoenix, AZ, Apr. 2020.
  • [Moved to Dec 2020] X. L. Liu, and C. K. Tan, “Understanding of AlInO ternary alloy for GaN Power Electronics”, MRS Spring Meetings 2020, Phoenix, AZ, Apr. 2020.
  • X. L. Liu, and C. K. Tan, “DFT study on the (BxGa1-x)2O3 Alloys”, SPIE Photonics West 2021, San Francisco, CA, Mar. 2021.
  • Z. Henderson, C. Sammarco, X. L. Liu, D. Borovac, and C. K. Tan, “GaN biosensor design with localized surface plasmon resonance”, SPIE Photonics West 2021, San Francisco, CA, Mar. 2021.
  • X. L. Liu, H. Bilan, C. K. Tan, “Experimental Investigation on Selenium Ion-Implanted Gallium Oxide”, SPIE Photonics West 2021, San Francisco, CA, Mar. 2021.

Patent or Invention Disclosures

  • Nelson Tansu, Wei Sun, and Chee-Keong Tan, Artificially Engineered III-Nitride Digital Alloy. (US Patent approved: US patent number 10347722).